Hydrogen-free graphene edges
نویسندگان
چکیده
منابع مشابه
Selective etching of graphene edges by hydrogen plasma.
We devised a controlled hydrogen plasma reaction at 300 °C to etch graphene and graphene nanoribbons (GNRs) selectively at the edges over the basal plane. Atomic force microscope imaging showed that the etching rates for single-layer and few-layer (≥2 layers) graphene are 0.27 ± 0.05 nm/min and 0.10 ± 0.03 nm/min, respectively. Meanwhile, Raman spectroscopic mapping revealed no D band in the pl...
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ژورنال
عنوان ژورنال: Nature Communications
سال: 2014
ISSN: 2041-1723
DOI: 10.1038/ncomms4040